1M × 64-Bit Dynamic RAM Module

The HYM 641010/20GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 64- bit in a 168-pin, dual read-out, single-in-line package comprising sixteen HYB 514400BJ/BT 1M × 4 DRAMs in 300 mil wide SOJ or TSOPII - packages mounted together with sixteen 0.2 µF ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four BiCMOS 8-bit buffers/line drivers.

Advanced Information
• 1 048 576 words by 64-bit organization
• Fast access and cycle time
   60 ns access time
   110 ns cycle time (-60 version)
   70 ns access time
   130 ns cycle time (-70 version)
• Fast page mode capability with
   40 ns cycle time (-60 version)
   45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
   max. 9680 mW active (-60 version)
   max. 8800 mW active (-70 version)
   CMOS – 451 mW standby
   TTL – 550 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• Byte Write Capability
• 16 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs except RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes sixteen 1M × 4 -DRAMs (HYB 514400BJ/BT) and four BiCMOS 8-bit buffers/line drivers 74ABT244
• Two version : HYM 641010GS with SOJ-components (8.89 mm module thickness)
                         HYM 641020GS with TSOPII-components (4.06 mm module thickness)
• 1024 refresh cycles / 16 ms
• Optimized for use in byte-write non-parity applications
• Gold contact pads,double sided module with 25.35 mm (1000 mil) height