HYB5117400BJ データシート, Infineon Technologies HYB5117400BJ PDF - DATASHEETBANK

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HYB5117400BJ データシート - Infineon Technologies

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HYB5117400BJ

コンポーネント説明

4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)

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26 Pages

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129.9 kB

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Infineon Technologies

Advanced Information

• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil

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