This HYB3164(5)805 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology.

Preliminary Information
• 8 388 608 words by 8-bit organization
• 0 to 70 ˚C operating temperature
• Fast access and cycle time
    RAS access time:
    50 ns (-50 version)
    60 ns (-60 version)
    Cycle time:
    84 ns (-50 version)
    104 ns (-60 version)
    CAS access time:
    13 ns ( -50 version)
    15 ns ( -60 version)
• Hyper page mode (EDO) cycle time
    20 ns (-50 version)
    25 ns (-60 version)
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation
    max. 396 active mW ( HYB 3164805J/T(L)-50)
    max. 360 active mW ( HYB 3164805J/T(L)-60)
    max. 504 active mW ( HYB 3165805J/T(L)-50)
    max. 432 active mW ( HYB 3165805J/T(L)-60)
    7.2 mW standby (TTL)
    720 W standby (MOS)
    14.4 mW Self Refresh (L-version only)
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
    RAS-only refresh, hidden refresh and self refresh modes
• Hyper page mode (EDO) capability
• 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164805J/T(L))
• 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165805J/T(L))
• Plastic Package:
    P-SOJ-34-1 500 mil HYB 3164(5)805J
    P-TSOPII-34-1 500 mil HYB 3164(5)805T(L)