部品番号
HVV1214-025
Other PDF
PDF
page
2 Pages
File Size
623.2 kB
メーカー
HVVi Semiconductors, Inc.
HOME >>> HVVi Semiconductors, Inc. >>> HVV1214-025 PDF
HVV1214-025 データシート - HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
DESCRIPTION
The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200MHz and 1400MHz.
FEATURES
• High Power Gain
• Excellent Ruggedness
• 48V Supply Voltage
部品番号
コンポーネント説明
ビュー
メーカー
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty
HVVi Semiconductors, Inc.
Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Share Link: 