The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.

FEATUREs
• High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz
• High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz
• High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70
• Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB
• Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA
• Excellent hFE and VBE Matching
• Pin-to-Pin to UPA102G
• Pb-Free Plus Anneal Available (RoHS Compliant)

APPLICATIONs
• Single Balanced Mixers
• Wide Band Amplification Stages
• Differential Amplifiers
• Multipliers
• Automatic Gain Control Circuits
• Frequency Doublers, Tripplers
• Oscillators
• Constant Current Sources
• Wireless Communication Systems
• Radio and Satellite Communications
• Fiber Optic Signal Processing
• High Performance Instrumentation