部品番号
HAT2210R-EL-E
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Renesas Electronics
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HAT2210R-EL-E データシート - Renesas Electronics
Renesas Electronics
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Built-in Schottky Barrier Diode
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Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching ( Rev : 2009 )
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
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