General Description
The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte
gral base-emitter resistor to optimize elevated tempera ture characteristics.

FEATUREs
■ High BVCEO
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M
■ High sensitivity to low input current (Min. 500% CTR at IF = 1mA)
■ Low leakage current at elevated temperature (Max. 100µA at 80°C)
■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2

APPLICATIONs
■ CMOS logic interface
■ Telephone ring detector
■ Low input TTL interface
■ Power supply isolation
■ Replace pulse transformer