The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base–emitter resistors. The on–chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and low leakage, they provide excellent performance.

• High CTR, H11G1 & H11G2 — 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA)
• High V(BR)CEO, H11G1 — 100 Volts, H11G2 — 80 Volts
• To order devices that are tested and marked per VDE 0884 requirements, the
   suffix ”V” must be included at end of part number. VDE 0884 is a test option.

APPLICATIONs
• Interfacing and coupling systems of different potentials and impedances
• Phase and Feedback Controls
• General Purpose Switching Circuits
• Solid State Relays