DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

FEATURES
• High BVCEO
   - Minimum 100 V for H11G1
   - Minimum 80 V for H11G2
   - Minimum 55 V for H11G3
• High sensitivity to low input current
  Minimum 500 percent CTR at IF = 1 mA
• Low leakage current at elevated temperature (maximum 100 µA at 80°C)
• Underwriters Laboratory (UL) recognized File# E90700

APPLICATIONS
• CMOS logic interface
• Telephone ring detector
• Low input TTL interface
• Power supply isolation
• Replace pulse transformer