DESCRIPTION
The H11G1 and H11G2 are the photodarlington-type optically coupled optocouplers. Both devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

FEATURES
■ High BVCEO
   Minimum 100 V for H11G1
   Minimum 80 V for H11G2
■ High sensitivity to low input current -
   Minimum 500 percent CTR at IF = 1 mA
■ Low leakage current at elevated temperature
   (maximum 100 µA at 80°C)
■  Underwriters Laboratory (UL) recognized File# E90700

APPLICATIONS
■  CMOS logic interface
■  Telephone ring detector
■  Low input TTL interface
■  Power supply isolation
■  Replace pulse transformer