H01N45A データシート - Hi-Sincerity Microelectronics
メーカー
Hi-Sincerity Microelectronics
Features
• Typical RDS(on)=4.1Ω
• Extremely High dv/dt Capability
• 100% Avalanche Tested
• Gate Charge Minimized
• New High Voltage Benchmark
APPLICATIONs
• Switch Mode Low Power Supplies (SMPS)
• Low Power, Low Cost CFL (Compact Fluorescent Lamps)
• Low Power Battery Chargers
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Mocroelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
N-Channel Power Field Effect Transistor
Hi-Sincerity Microelectronics
