Functional Description
The GS841E18A is a 256K x 18 high performance synchronous DCD SRAM with integrated Tag RAM comparator. A 2-bit burst counter is included to provide burst interface with PentiumTM and other high performance CPUs.

FEATUREs
• 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply
• Dual Cycle Deselect (DCD)
• Intergrated data comparator for Tag RAM application
• FT mode pin for flow through or pipeline operation
• LBO pin for Linear or Interleave (PentiumTM and X86) Burst mode
• Synchronous address, data I/O, and control inputs
• Synchronous Data Enable (DE)
• Asynchronous Output Enable (OE)
• Asynchronous Match Output Enable (MOE)
• Byte Write (BWE) and Global Write (GW) operation
• Three chip enable signals for easy depth expansion
• Internal self-timed write cycle
• JTAG Test mode conforms to IEEE standard 1149.1
• JEDEC-standard 100-lead TQFP package and 119-BGA
• Pb-Free 100-lead TQFP package available