Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

FEATUREs
• 6A, 600V at TC = +25°C
• 600V Switching SOA Capability
• Typical Fall Time - 130ns at TJ = +150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode