FZ1000R33HL3 データシート - Infineon Technologies
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Infineon Technologies
Features
• Electrical features
- VCES = 3300 V
- IC nom = 1000 A / ICRM = 2000 A
- Unbeatable robustness
- High DC stability
- High short-circuit capability
- Low VCE,sat
- Tvj,op = 150°C
- VCE,sat with positive temperature coefficient
• Mechanical features
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- IHM B housing
- Isolated base plate
Potential applications
• Chopper applications
• Medium-voltage converters
• Motor drives
• Traction drives
• UPS systems
• Wind turbines
IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode ( Rev : 2010 )
Infineon Technologies
IHM-B module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode
Infineon Technologies
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode
Infineon Technologies
IHM-B module with fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode
Infineon Technologies
IHM-B module with fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode
Infineon Technologies
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode ( Rev : 2010 )
Infineon Technologies
IHM-B module with fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode ( Rev : 2010 )
Infineon Technologies
IHM-B module with fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode
Infineon Technologies
IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode ( Rev : 2010 )
Infineon Technologies
IHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode
Infineon Technologies