FX50KMJ-2-A8 データシート - Renesas Electronics
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Renesas Electronics
Features
• Drive voltage : 4 V
• VDSS: –100 V
• rDS(ON) (max): 50 mΩ
• ID: –50 A
• Integrated Fast Recovery Diode (TYP.) : 100 ns
• Viso : 2000 V
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High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET ( Rev : 2010 )
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET ( Rev : 2004 )
Renesas Electronics
