FS30ASJ-06F-T13(2010) データシート - Renesas Electronics
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Renesas Electronics
Features
• Drive voltage : 4 V
• VDSS : 60 V
• rDS(ON) (max) : 22 mΩ
• ID : 30 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
APPLICATIONs
Motor control, lamp control, solenoid control, DC-DC converters, etc.
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics
High-Speed Switching Use Nch Power MOS FET
Renesas Electronics