Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FEATUREs
• -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V,
   ID = -5.7 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 45 pF)
• 100% Avalanche Tested
• 175oC Maximum Junction Temperature Rating