Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

FEATUREs
• BVCEO > -500V
• IC = -150mA high Continuous Collector Current
• ICM Up to 500mA Peak Pulse Current
• Excellent hFE Characteristics up to IC = 100mA
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)