Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

FEATURE
• BVCEO > 60V
• IC = 1A Continuous Collector Current
• ICM = 2A Peak Pulse Current
• RCE(sat) = 195mΩ for a low equivalent On-Resistance
• 500mW Power Dissipation
• hFE characterised up to 2A for high current gain hold up
• Complementary PNP Type: FMMT591Q
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)