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FMBT3906W データシート - Formosa Technology

FMBT3906W image

部品番号
FMBT3906W

コンポーネント説明

Other PDF
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page
10 Pages

File Size
109.2 kB

メーカー
Formosa
Formosa Technology 

200mA Silicon PNP Epitaxial Planar Transistor


FEATUREs
• High collector-emitterbreakdien voltage. (BVCEO = -40V@IC=-1.0mA)
• Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
• Suffix "-H" dinicates Halogen-free part, ex.FMBT3906W.

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