FJPF9020 データシート - Fairchild Semiconductor
メーカー
Fairchild Semiconductor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High Collector-Base Breakdown Voltage : BVCBO = -550V
• High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.)
• Industrial Use
PNP Epitaxial Darlington Transistor ( Rev : 2001 )
Fairchild Semiconductor
PNP Epitaxial Darlington Transistor
Fairchild Semiconductor
PNP Epitaxial Darlington Transistor
Fairchild Semiconductor
PNP Epitaxial Silicon Darlington Transistor
Semihow
PNP Epitaxial Silicon Darlington Transistor
Fairchild Semiconductor
PNP Epitaxial Silicon Darlington Transistor
Fairchild Semiconductor
PNP Epitaxial Silicon Darlington Transistor
Semihow
PNP Epitaxial Silicon Darlington Transistor
Semihow
PNP Epitaxial Silicon Darlington Transistor ( Rev : 2008 )
Fairchild Semiconductor
PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR
Samsung
