FIR11N90ANG データシート - Shenzhen Foster Semiconductor Co., Ltd.
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Shenzhen Foster Semiconductor Co., Ltd.
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
□ Unrivalled Gate Charge: Qg= 60nC (Typ.).
□ BVDSS=900V,ID=11A
□ RDS(on) : 1.1Ω (Max) @VG=10V
□ 100% Avalanche Tested
900V N-Channel MOSFET
Fairchild Semiconductor
900V N-Channel MOSFET ( Rev : 2006 )
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900V N-Channel MOSFET
Fairchild Semiconductor
900V N-Channel MOSFET ( Rev : 2006 )
Fairchild Semiconductor
900V N-Channel MOSFET
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900V N-Channel MOSFET ( Rev : 2003 )
Fairchild Semiconductor
900V N-Channel MOSFET
Fairchild Semiconductor
900V N-Channel MOSFET
Fairchild Semiconductor
900V N-Channel MOSFET
Fairchild Semiconductor
900V N-Channel MOSFET
Fairchild Semiconductor