部品番号
FGS15N40L
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Fairchild Semiconductor
FGS15N40L データシート - Fairchild Semiconductor
Fairchild Semiconductor
General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application
FEATUREs
• High Input Impedance
• High Peak Current Capability (130A)
• Easy Gate Drive
APPLICATION
• Strobe Flash
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