General Description
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FEATUREs
• Q1: N-Channel
    5.5 A, 20 V. RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V
• Q2: P-Channel
    –3.8 A, 20 V. RDS(ON) = 43 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package

APPLICATIONs
• DC/DC conversion
• Power management
• Load switch