General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

FEATUREs
Max rDS(on)= 46mΩat VGS= -4.5V, ID= -4.9A
Max rDS(on)= 69mΩat VGS= -2.5V, ID= -4.0A
Low gate charge (11nC typical).
High performance trench technology for extremely low rDS(on).
HBM ESD protection level >3kV (Note 3).
RoHS Compliant