General Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).

FEATUREs
• –13.5 A, –20 V.
    RDS(ON) = 8.5 mΩ @ VGS = –4.5 V
    RDS(ON) = 10.5 mΩ @ VGS = –2.5 V
    RDS(ON) = 14 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High current and power handling capability

APPLICATIONs
• Power management
• Load switch
• Battery protection