General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FEATUREs
• –10 A, –20 V. RDS(ON) = 11 mΩ @ VGS = –4.5 V RDS(ON) = 14 mΩ @ VGS = –2.5 V RDS(ON) = 20 mΩ @VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

APPLICATIONs
• Power management
• Load switch
• Battery protection