General Description
SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.

FEATUREs
• -6.1 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V RDS(ON) = 0.040 Ω @ VGS = -2.5 V
• High density cell design for extremely low RDS(ON).
• Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.