General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Description
• RDS(on) = 38.2mΩ ( MAX ) @ VGS = 10V, ID = 5.9A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant

APPLICATION
• DC to AC converters / Synchronous Rectification