Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FEATUREs
• RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
   RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant

APPLICATIONs
• Consumer Appliances
• LCD/LED/PDP TV
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter