部品番号
FDP8D5N10C
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ON Semiconductor
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FDP8D5N10C データシート - ON Semiconductor
ON Semiconductor
General Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FEATUREs
◾ Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
◾ Extremely Low Reverse Recovery Charge, Qrr
◾ 100% UIL Tested
◾ RoHS Compliant
APPLICATIONs
◾ Synchronous Rectification for ATX / Server / Telecom PSU
◾ Motor drives and Uninterruptible Power Supplies
◾ Micro Solar Inverter
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N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ
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N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 222 A, 2.3 mΩ ( Rev : 2017 )
ON Semiconductor
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