Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FEATUREs
• RDS(on) = 4.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
• Low FOM RDS(on) * QG
• Low Reverse Recovery Charge, Qrr = 62.5 nC
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant

APPLICATIONs
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies