General Description
   This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications

FEATUREs
• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
                          RDS(ON) = 50 mΩ @ VGS = –2.5 V
                          RDS(ON) = 80 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
   low RDS(ON)
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
   power handling capability than SOT23 in the same
   footprint

APPLICATIONs
• Battery management
• Load switch
• Battery protection