General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

FEATUREs
■ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
■ Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
■ Advanced Package and Silicon combination for low rDS(on) and high efficiency
■ Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
■ MSL1 robust package design
■ 100% UIL tested
■ RoHS Compliant

APPLICATIONs
■ IMVP Vcore Switching for Notebook
■ VRM Vcore Switching for Desktop and Server
■ OringFET / Load Switch
■ DC-DC Conversion