General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FEATUREs
• –0.6 A, –20 V. RDS(ON)= 0.40 Ω@ VGS= –4.5 V
                     RDS(ON)= 0.55 Ω@ VGS= –2.5 V
                     RDS(ON)= 0.80 Ω@ VGS= –1.8 V
•Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package

APPLICATIONs
•Battery management
•Load switch