部品番号
FDD86250
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Fairchild Semiconductor
FDD86250 データシート - Fairchild Semiconductor
Fairchild Semiconductor
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FEATUREs
◾ Shielded Gate MOSFET Technology
◾ Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
◾ Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
◾ 100% UIL tested
◾ RoHS Compliant
APPLICATION
◾ DC - DC Conversion
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N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ
Fairchild Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 222 A, 2.3 mΩ ( Rev : 2017 )
ON Semiconductor
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