FDD3672 データシート - Fairchild Semiconductor
メーカー

Fairchild Semiconductor
Features
• rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A
• Qg(tot) = 24nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
APPLICATIONs
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
N-Channel UltraFET® Trench MOSFET 100V, 44A, 28mΩ
ON Semiconductor
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ
Fairchild Semiconductor
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ
ON Semiconductor
44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET
Fairchild Semiconductor
44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET
Fairchild Semiconductor
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
Intersil
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
100V N-Channel Trench MOSFET
Wuxi Unigroup Microelectronics Company
44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
Intersil
100V N-Channel Power Trench MOSFET
KEXIN Industrial