General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FEATUREs
• 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical)

APPLICATIONs
• DC/DC converter