General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

FEATUREs
■ –3.5 A, –20 V. RDS(ON) = 80 mΩ @ VGS = –4.5 V RDS(ON) = 110 mΩ @ VGS = –2.5 V
■ Low gate charge (7.2 nC typical)
■ High performance trench technology for extremely low RDS(ON)

APPLICATIONs
■ Battery management
■ Load switch
■ Battery protection