General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

FEATUREs
● –2.2 A, –20 V.
   RDS(ON) = 125 mW @ VGS = –4.5 V
   RDS(ON) = 190 mW @ VGS = –2.5 V
● Low gate charge
● Fast switching speed
● High performance trench technology for extremely low RDS(ON)
● SuperSOT TM -6 package: small footprint 72%
   smaller than standard SO-8); low profile (1mm thick)
  
Applications
● Load switch
● Battery protection
● Power management