FCX1151A(1998) データシート - Diodes Incorporated.
メーカー
Diodes Incorporated.
FEATURES
* 2W POWER DISSIPATION
* 5A Peak Pulse Current
* Excellent HFE Characteristics up to 5 Amps
* Extremely Low Saturation Voltage E.g. 60mv Typ.
* Extremely Low Equivalent On-resistance; RCE(sat) 66mΩ at 3A
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ( Rev : 1998 )
Diodes Incorporated.
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
Zetex => Diodes
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
Zetex => Diodes
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ( Rev : 1999 )
Diodes Incorporated.
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
Fairchild Semiconductor
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ( Rev : 2005 )
Diodes Incorporated.
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
Zetex => Diodes
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ( Rev : 1999 )
Diodes Incorporated.
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
Zetex => Diodes
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ( Rev : 1998 )
Diodes Incorporated.
