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FCH041N60F-F085 データシート - ON Semiconductor

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部品番号
FCH041N60F-F085

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page
10 Pages

File Size
503.9 kB

メーカー
ONSEMI
ON Semiconductor 

Description
SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SUPERFET II is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive. SUPERFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.


FEATUREs
• Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A
• Typical Qg(tot) = 267 nC at VGS = 10 V, ID = 38 A
• Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF)
• 100% Avalanche Tested
• Qualified to AEC Q101 and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant


APPLICATIONs
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV


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