Description
The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on STs well-established strip based PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.
FEATUREs
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
APPLICATIONs
■ Switching application
N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET
STMicroelectronics
N - CHANNEL 900V - 4 Ω - 3.5 A - TO-220/TO-220FP PowerMESH™ MOSFET ( Rev : 1998 )
STMicroelectronics
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 ( Rev : 2010 )
STMicroelectronics
N-channel 950 V, 1.1 Ω, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3™ Power MOSFET
STMicroelectronics
N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH™ Power MOSFET ( Rev : 2010 )
STMicroelectronics
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
STMicroelectronics
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
STMicroelectronics
N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 ( Rev : 2011 )
STMicroelectronics