ESD307-U1-02N データシート - Infineon Technologies
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Infineon Technologies
Features
• ESD / Transient / Surge protection according to:
– IEC61000-4-2 (ESD): ±30 kV (air / contact discharge)
– IEC61000-4-4 (EFT): ±4 kV / ±80 A (5/50 ns)
– IEC61000-4-5 (surge): ±34 A (8/20 μs)
• Uni-directional working voltage up to VRWM = 10 V
• Low capacitance: CL = 270 pF (typical)
• Low clamping voltage VCL = 24 V (typical) at IPP = 34 A
• Low reverse current. IR < 1 nA (typical)
• Small and flat-profile SMD plastic package: 1.6 mm x 0.8 mm x 0.375 mm.
• Pb-free (RoHS compliant) and halogen free package
APPLICATION Examples
• Surge protection of USB VBUS lines in mobile devices
Uni-directional, 15 V, 210 pF, 0603, RoHS and Halogen Free compliant
Infineon Technologies
Bi-directional, 18 V (AC), 13 V (DC), 0.3 pF, 0201, RoHS and Halogen Free compliant
Infineon Technologies
TVS (transient voltage suppressor) Bi-directional, 16 V, 4.2 pF, 0201, RoHS and halogen free compliant
Infineon Technologies
TVS (transient voltage suppressor) Bi-directional, 24 V, 2.8 pF, 0201, RoHS and halogen free compliant
Infineon Technologies
TVS (transient voltage suppressor) Bi-directional, 7 V, 0.25 pF, 0201, RoHS and halogen free compliant
Infineon Technologies
TVS (transient voltage suppressor) Bi-directional, 2.1 V, 0.28 pF, 0201, RoHS and halogen free compliant
Infineon Technologies
TVS (Transient Voltage Suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pF, 01005, RoHS and Halogen Free compliant
Infineon Technologies
4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
Samsung
4Gb A-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
Samsung
4Gb D-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
Samsung