GENERAL DESCRIPTION
The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

• 3V, single power supply operation
   - Full voltage range: 2.7-3.6 volt read and write
      operations for battery-powered applications.
   - Regulated voltage range: 3.0-3.6 volt read
      and write operations for compatibility with
      high performance 3.3 volt microprocessors.
• High performance
   - Access times as fast as 45 ns
• Low power consumption (typical values at 5
   MHz)
   - 7 mA typical active read current
   - 15 mA typical program/erase current
   - 1 µA typical standby current (standard access
      time to active mode)
• Flexible Sector Architecture:
   - One 16 K-byte, two 8 K-byte, one 32 K-byte,
      and seven 64 K-byte sectors (byte mode)
   - One 8 K-word, two 4 K-word, one 16 K-word
      and seven 32 K-word sectors (word mode)
• Sector protection:
   - Hardware locking of sectors to prevent
      program or erase operations within individual
      sectors
   - Additionally, temporary Sector Unprotect
      allows code changes in previously locked
      sectors.
• High performance program/erase speed
   - Byte/Word program time: 8µs typical
   - Sector erase time: 500ms typical
• JEDEC Standard Embedded Erase and
   Program Algorithms
• JEDEC standard DATA# polling and toggle
   bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Erase Suspend / Resume modes:
   Read or program another Sector during
   Erase Suspend Mode
• triple-metal double-poly triple-well CMOS
   Flash Technology
• Low Vcc write inhibit < 2.5V
• minimum 1,000K program/erase endurance
   cycle
• Package Options
   - 48-pin TSOP (Type 1)
   - 48-ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
   Range