13.75-14.5GHz, 2W Internally Matched Power FET
• 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM
• EIA FEATURES HIGH PAE( 30% TYPICAL)
• EIB FEATURES HIGH IP3(46dBm TYPICAL)
• +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB
• 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
• NON-HERMETIC METAL FLANGE PACKAGE
13.75-14.5GHz, 4W Internally Matched Power FET
Excelics Semiconductor, Inc.
13.75-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.75-14.5GHz, 8W Internally Matched Power FET
Excelics Semiconductor, Inc.
14.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.0-14.5GHz, 2W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
14.0-14.5GHz, 2W Internally Matched Power FET
Excelics Semiconductor, Inc.
14.0~14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
14.0-14.5GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
13.0-14.5GHz, 8W Internally Matched Power FET
Excelics Semiconductor, Inc.
14.0-14.5GHz, 4W Internally Matched Power FET
Excelics Semiconductor, Inc.