EFA072A データシート - ETC
メーカー

ETC
[Excelics]
Low Distortion GaAs Power FET
• +25.0dBm TYPICAL OUTPUT POWER
• 10.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Unspecified
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
Excelics Semiconductor, Inc.