DXT651Q データシート - Diodes Incorporated.
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Diodes Incorporated.
Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
FEATUREs
• BVCEO > 60V
• IC = 3A High Continuous Collector Current
• ICM up to 6A Peak Pulse Current
• 2W Power Dissipation
• Low Saturation Voltage VCE(SAT) < 300mV @ 1A
• Complementary PNP Type: DXT751Q
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
APPLICATIONs
• Load Management Functions
• Motor Control
• DC-DC / DC-AC Converters
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Diodes Incorporated.
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Diodes Incorporated.
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
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