Device Description:
A description of this device can be found in the product data sheet. You can find the product data
sheet at //dbserv.maxim-ic.com/l_datasheet3.cfm.

Device Information:
Process:                             1P, 1M, 2.0um, Pfield , WJ BPSG ,
Number of Transistors:          Unknown
Passivation:                         Passivation w/Nitride
Die Size:                             100 x 82
Interconnect:                       Aluminum / 1% Silicon / 0.5% Copper
Gate Oxide Thickness:            250 Å