Features
• DIOFET utilizes a unique patented process to monolithically
   integrate a MOSFET and a Schottky in a single die to deliver:
   • Low RDS(ON) - minimizes conduction losses
   • Ultra Low VSD – enhanced to reduce losses due to body
      diode conduction
   • Low Qrr - lower Qrr of the integrated Schottky reduces body
      diode switching losses
   • Low gate capacitance (Qg/Qgs) ratio – reduces risk of 
      shoot-through or cross conduction currents at high frequencies
   • Avalanche rugged – IAR and EAR rated
• Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability